Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys

We have investigated the carrier transport mechanism of mixed-phased hydrogenated boron-doped nanocrystalline silicon–silicon carbide alloy (p-nc-Si-SiC:H) films. From temperature-dependent dark conductivity measurements, we found that the p-nc-Si-SiC:H alloys have two different carrier transport mechanisms: one is the thermally activated hopping between neighboring crystallites near the room-temperature region and the other is the band tail hopping below 150 K.