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Precipitation of creep-life enhancing H carbides and ζ silicides occurring during α2 dissolution in fully lamellar (α2+γ)-TiAl (alloyed with carbon and silicon) were studied by transmission electron microscopy. The α2→(γ+precipitate) transformation reaction consisted of the following sequence: α2 dissolution by ledge mechanism, silicide precipitation at the ledges/interfacial defects, followed by intralamellar H-carbide precipitation in the remainder thin α2 laths. Precipitation of H carbides inside the α2 laths is most likely caused by an uphill diffusion and segregation of carbon ahead of the propagating γ∕α2 interface.
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Karadge et al. (2006) studied this question.
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