Mid-IR resonant cavity detectors

Resonant cavity detectors based on III–V materials have been designed, grown entirely by molecular beam epitaxy, fabricated, and tested. They offer a low noise (dark current densities of 0.4 mA/cm2 were measured at 298 K, close to the predicted value of 0.31 mA/cm2), narrow response detector (full width at half maximum of 57 nm in GaSb and 45 nm in InAs) in the mid-infrared region, with future applications in spectroscopy, gas sensing, and optical communications.