Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers

In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.