Nearly stoichiometric silicon, germanium, and tin nitride thin films were deposited from the corresponding homoleptic dimethylamido complexes M (NMe2)4 (M=Si, Ge, Sn; Me=CH3), and an ammonia plasma at low substrate temperatures (<400 °C). Tin nitride films were also deposited from Sn (NMe2)4 and ammonia without plasma activation. The films showed little (
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Hoffman et al. (1995) studied this question.