Review details 3C-SiC crystal growth via methyl trichlorosilane decomposition across high temperatures, highlighting structural polarity influences on defect morphology and impurity segregation.
This overview, based on earlier published papers, concerns the growth and some properties of single and polycrystalline cubic silicon carbide (3C-SiC) prepared by thermal decomposition of methyl trichlorosilane in hydrogen on resistively heated graphite substrates in a temperature range of 1500 to 2100 K. The morphology of faceted crystals and their specific twin structure, as well as the effects of crystallographic polarity of the 3C-SiC structure (sphalerite type) on impurity segregation and etching are considered in some detail.
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Gorin et al. (1997) studied this question.
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