Experimental investigation demonstrates enhanced giant magnetoresistance in silicon-rich CoMnSi sensors, indicating that interface spin polarization governs device transport efficiency.
We investigated structural and magnetic properties of CoMnSi (CMS) Heusler alloy films and giant magneto-resistance (GMR) ratio of current-perpendicular-to-plane (CPP) GMR sensor elements. The films were deposited with magnetron sputtering method and annealed at 673 K and 773 K. The CMS films were identified as B2 structure by using X-ray diffraction and the magnetization of the films were evaluated as 0.95 T. We fabricated the CPP-GMR sensors varying the composition of the CMS films, Co48Mn21Si31(at. %) as Si-rich CMS and Co51Mn25Si24(at. %) as CMS-ref, having a FeCo layer between the CMS and Cu spacer. It was found that the element with Si-rich CMS exhibited higher GMR ratio of 9.0% than that with CMS-ref. Our calculations indicate that larger spin polarization of contact region between the CMS film and the FeCo film relates to larger GMR ratio.
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Mizuno et al. (2008) studied this question.
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