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Conventional methods to extract an effective mobility (μeff) in a metal-oxide-semiconductor field-effect-transistor (MOSFET) tend to ignore the portions of parasitic components of the device. This can cause a substantial error in the extracted value of the effective mobility. In this letter, we have proposed a unified procedure that enables to accurately capture each portion of parasitic series resistance (RSD) and parasitic gate capacitance (Cg_par) components. Then, we have investigated the impact of the parasitic components on the extracted value of the effective mobility in a gate-last surface-channel In0.7Ga0.3As quantum-well MOSFET. We have found that the extracted effective mobility using our method turns out to be independent upon gate length (Lg) from 10 to 4 μm, which verifies the accuracy of the approach proposed in this letter.
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Park et al. (2016) studied this question.
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