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A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated.
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Jeong et al. (2014) studied this question.
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