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We present an optical reflectance and Raman-scattering study of the A_1-xAₓ^'MnO₃ system as a function of temperature and doping $(0.2<~x<~0.5).$ The metal-semiconductor transition in the A_1-xAₓ^'MnO₃ system is characterized by a change from a diffusive electronic Raman-scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic phase. We interpret this change in the scattering response as a crossover from a small-polaron-dominated regime at high temperatures to a large-polaron-dominated low-temperature regime. Interestingly, we observe evidence for the coexistence of large and small polarons in the low-temperature ferromagnetic phase. We contrast these results with those obtained for EuB₆, which is a low-Tc magnetic semiconductor with similar properties to the manganites, but with a substantially reduced carrier density and polaron energy.
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Yoon et al. (1998) studied this question.
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