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A fluorine-substituted hexa-peri-hexabenzocoronene was synthesized as a thermostable active material for n-type semiconductors. The LUMO and HOMO energy levels, estimated by UV-vis and photoelectron spectroscopy, were lower by 0.5 eV than those of hexa-peri-hexabenzocoronene. A field-effect transistor fabricated by vacuum sublimation showed n-type performance with a field-effect mobility of 1.6 x 10(-2) cm(2)/Vs and an on/off ratio of 10(4). The electron-withdrawing effect of the fluorine substituents changed the polarity from p-type to n-type.
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Kikuzawa et al. (2007) studied this question.
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