Practical approach to determining charge collected in multi-junction structure due to the ion shunt effect

Presents the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The authors present results for a typical silicon CMOS structure and discuss the effects of voltage, ion energy, and structure on the charge collected. The computer program uses an algorithm to produce a realistic e-h pair distribution. This initial distribution is shown to greatly affect the amount of charge collected. Therefore, typical simulators that assume uniform and energy-independent distributions will be inaccurate. The program determines the e-h distributions with respect to time by solving the ambipolar diffusion equation at various depths within the shunt. From the e-h pair distributions, the time-dependent resistances can be determined and the collected charge can be determined as a function of time.>