Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size

Ultraviolet optical pulses with a full-width-at-half-maximum diameter focused spot size of 0.32 μm are generated, characterized, and used to produce SEUs in a 90 nm CMOS/SOI SRAM. The results provide unequivocal experimental evidence for cell-to-cell variations in SEU sensitivity that can be identified with process variations at the individual transistor level.