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Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas, Zhu, Yadan, Lu, Taiping, Zhou, Xiaorun, Zhao, Guangzhou, Dong, Hailiang, Jia, Zhigang, Liu, Xuguang, Xu, Bingshe
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Zhu et al. (2017) studied this question.
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