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An edge‐coupled high‐speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at −3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high‐speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high‐speed performance at 1550nm.
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Yang et al. (2013) studied this question.
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