The etching of amorphous and microcrystalline silicon films in a hydrogen plasma has been investigated. For amorphous silicon an etch rate of 2.4 A/s was found. Microcrystalline silicon is etched at a rate of 0.3 A/s. Microcrystalline silicon consists of two phases. The amorphous part is removed preferably.
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Oort et al. (1987) studied this question.
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