Determination of in-depth damaged profile by Raman line scan in a pre-cut He2+ irradiated UO2

Raman measurements were carried out to probe the spectroscopic signatures of the ion beam irradiation-induced damage and their in-depth profiles on a Uranium dioxide sample previously cut and polished prior to performing a 25 MeV He2+ cyclotron beam irradiation. Raman spectra clearly show the creation of three defects bands (U1 ≈ 530, U2 ≈ 575, and U3 ≈ 635 cm−1) resulting from the ion irradiation and also some changes in the T2g peak of UO2. Their in-depth distribution inside the sample exhibits a clear increase of the damage from the surface up to the position of the implanted He.