Ambipolar Field‐Effect Transistor (FET) and Redox Characteristics of a π‐Conjugated Thiophene/1,3,4‐Thiadiazole CT‐Type Copolymer

Summary: A π‐conjugated charge transfer‐type copolymer consisting of an electron‐donating thiophene and an electron‐accepting 1,3,4‐thiadiazole, P(ThdzTh), underwent facile electrochemical p‐ and n‐doping, as revealed by cyclic voltammetry. The copolymer gave a new ambipolar field‐effect transistor (FET), which showed typical IDS (source–drain current)–VDS (source–drain voltage) curves in both a p‐type working mode and an n‐type working mode. In the n‐type working mode, the polymer showed a carrier mobility of about 5 × 10−3 cm2 · V−1 · s−1 and an on/off ratio of about 3 × 104. n‐Channel field‐effect transistor characteristics of P(ThdzTh). magnified image n‐Channel field‐effect transistor characteristics of P(ThdzTh).