Small-signal modeling of the transistor laser including the quantum capture and escape lifetimes

The authors report the analytical small-signal modeling of the distribution of minority carriers in the base of a transistor laser and of the high-speed dynamics of the device. The modeling is based on analytically solving the continuity equation and the rate equations, which incorporate the virtual states as a conversion mechanism. Wide-band operation of the transistor laser along with the suppression of the relaxation oscillation frequency peak is demonstrated.