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We have demonstrated a novel heterostructure device with functions of both a semiconductor laser and a heterojunction bipolar transistor, which is applicable to highly multifunctional optoelectronic integrated circuits. It can control both lasing power and output current. CW operation of the InGaAsP/InP transverse current injection laser at around room temperature has been achieved for the first time.
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Shibata et al. (1985) studied this question.
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