Room temperature mobility above 2100 cm 2 /Vs in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD

Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm2/V s and a two-dimensional electron gas (2DEG) density of 1.1 × 1013 cm–2 are achieved, corresponding to a sheet resistance of 277.8 Ω/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)