We report on the growth, structure, and luminescence of In0.5Ga0.5As/GaP self-assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si template. In situ reflection high-energy electron diffraction showed indistinguishable transitions during SAQD growth, indicating similar growth kinetics on GaP/Si and bulk GaP. In0.5Ga0.5As SAQD stacks on both substrates yielded nearly identical photoluminescence spectra, with peak position, peak-width, and integrated intensity varying by <5%. We then describe the characteristics of In0.5Ga0.5As/GaP SAQD light-emitting diodes on Si. These results demonstrate that combining In0.5Ga0.5As/GaP SAQDs with GaP/Si templates provides a novel path for monolithic integration of optoelectronics with Si.
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Song et al. (2013) studied this question.
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