Room temperature electroluminescence from light-emitting diodes based on In0.5Ga0.5As/GaP self-assembled quantum dots

Room-temperature electroluminescence from In0.5Ga0.5As/GaP(001) self-assembled quantum dot light emitting diodes is demonstrated. Output light versus input current measurements indicate that stacking multiple periods of self-assembled quantum dots can substantially increase the electroluminescence intensity. Aside from potential applications in transparent-substrate light emitting diodes, InxGa1-xAs/GaP self-assembled quantum dots could be a possible candidate for monolithic integration of optoelectronics with Si due to recent advances in the growth of high-quality GaP on Si.