Nanoscale metal–oxide–semiconductor field-effect transistors: scaling limits and opportunities

Compact, physics-based, short-channel models of subthreshold swing and threshold voltage are presented for undoped symmetric double-gate (DG) MOSFETs, including quantum-mechanical and fringe-induced-barrier-lowering effects. Scaling limit projections indicate that individual DG MOSFETs with good turn-off behaviour are feasible at 10 nm scale; however, practical exploitation of these devices toward gigascale integrated systems requires development of novel technologies for significant improvement in process control.