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The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linearID–VGrelation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.
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Wang et al. (2013) studied this question.
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