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October 1, 2000Surface Review and Letters

SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY

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Authors

RFR. M. FeenstraCarnegie Mellon UniversityHCHuajie ChenBeijing Normal UniversityVRV. RamachandranSASTRA University

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Feenstra et al. (2000) studied this question.

synapsesocial.com/papers/6ab34eab3455ebf8ddeb16d4https://doi.org/10.1142/s0218625x00000804
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Improved quality GaN grown by molecular beam epitaxy using In as a surfactant1998 · 160 citations
  2. 2Structure of GaN(0001): The laterally contracted Ga bilayer model2000 · 354 citations