Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition1997 · 488 citations
2. 2The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy1992 · 301 citations
3. 3Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy1995 · 36 citations
4. 4Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy1996 · 118 citations
5. 5Polarity determination of GaN films by ion channeling and convergent beam electron diffraction1996 · 184 citations