HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory

In this letter, HfO2-based ferroelectric random access memory (FeRAM) with metal-insulator-metal structure is studied for the first time under radiation conditions. V-doped HfO2-based FeRAM devices show high immunity to60Co γ ray radiation. Basic FeRAM parameters, such as leakage current, permittivity, remanent polarization, endurance, and fatigue, show almost no degradation after γ ray radiation with a total dose as high as 12.96 Mrad (SI). Furthermore, the ferroelectric hysteresis loops show no distortion after radiation. The high stability of V-doped HfO2FeRAM devices under radiation demonstrates their great potential for nuclear and aerospace applications.