Stabilization of β‐SiB3 from Liquid Ga: A Boron‐Rich Binary Semiconductor Resistant to High‐Temperature Air Oxidation

Unlike the original form of SiB3, which has a huge compositional spread in its Si/B ratio and a crystal structure with Si atoms randomly distributed over all its B12 cages, the new form of SiB3 (β form; see structure) is stoichiometrically and crystallographically ordered. The clear segregation of Si and B atoms in the new form is believed to be responsible for its enhanced oxidation resistance observed at high temperatures.