Structural and Electronic Properties of CVD Silicon Films Near the Crystallization Temperature

We have examined the structural properties of films grown by CVD in the range of temperatures 600-750°C. with particular emphasis on the volume repartition of crystals for films deposited around the crystallization temperature. We find that the general crystallization mechanism which determines the structure is one of deposition of an amorphous material followed by subsequent solid phase crystallization during the deposition time. This solid phase process occurs through a dominant nucleation at the film-substrate interface. The implications of this on the physical properties and morphology of these films will be discussed.