Planarization by radio-frequency bias sputtering of aluminum as studied experimentally and by computer simulation

Aluminum was deposited on silicon grooves with an aspect ratio (depth/width) of 0.27 ⋅ ⋅ ⋅ 0.5 by rf sputtering with substrate bias leading to the planarization of the silicon structure. This process was also studied by computer simulation. Excellent agreement between experimental and simulated profiles was achieved. The simulation makes it possible to study the influence of single parameters (redeposition and ion energy) on profile evolution separately, which cannot be done experimentally.