Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC

Ohmic CoSi2 contacts to n-type 4H-SiC showing low contact resistance have been made by sputter depositing sequential layers of Si and Co on 4H-SiC substrates followed by a two-step rapid thermal anneal at 600 °C and 950 °C. The contacts formed have been characterized at temperatures ranging from-40 °C to 500 °C with a specific contact resistance of 3.80∙10-5 Ωcm2 at 25 °C and a minimum of 6.0∙10-6 Ωcm2 at 500 °C.