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This paper explains the inconsistencies reported between effective flux calculations and integral rectangular parallelepiped calculations. The two types of calculation yield consistent results when the effective flux calculation is performed allowing for the appropriate geometry. A set of generic heavy ion cross section curves is introduced so that upset rate calculations can be compared as a function of device area and threshold. The figure of merit approximation is generalized so that it can be used for any orbit.
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Edward L. Petersen (1995) studied this question.
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