A new open-flow vapour phase process is reported for the epitaxial growth of cadmium mercury telluride on to substrates of cadmium telluride. The layers have been characterised by in-depth profiling using secondary ion mass spectrometry and also the electrical properties have been assessed using the van der Pauw technique. Material with x values in Cd x Hg 1-x Te ranging from 0 to 0.5 have been grown at approximately 410 degrees C.
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Mullin et al. (1981) studied this question.