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March 1, 1991Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Spectroscopy of dichalcogenides and trichalcogenides using scanning tunneling microscopy

Chen Wang C. G. Slough R. V. Coleman

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Abstract

The scanning tunneling microscope has been used to measure the charge-density wave (CDW) energy gap in the layer structure compounds 1T-TaSe2, 1T-TaS2, 1T-VSe2, 1T-TiS2, 2H-TaSe2, 2H-TaS2 and 2H-NbSe2. The measured values show a systematic dependence on the strength of the CDW and calculated values of 2Δ/kBTc are compared. CDW gap measurements on the trichalcogenide compounds NbSe3 and TaS3 are also included.

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Wang et al. (1991) studied this question.

synapsesocial.com/papers/6ab3971a7a8b04860e295d6c https://doi.org/10.1116/1.585257

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