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SrBi 2 Nb 2 O 9 and KTa 1− x Nb x O 3 thin films were grown by pulsed laser deposition on various substrates. Structural investigations evidenced that single phase polycrystalline randomly oriented films were grown on sintered alumina whereas epitaxial films were grown on (100)MgO. The microstructure was strongly controlled by the structural characteristics. Interdigited capacitors patterned on SrBi 2 Nb 2 O 9 films on both substrates as well as permittivity and losses measurements performed at 12.5 GHz showed a strong effect of the structural characteristics on the dielectric behavior.
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Rousseau et al. (2005) studied this question.
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