Effect of V/III ratio on the optical properties of Eu‐doped GaN

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Effect of V/III ratio on the optical properties of Eu‐doped GaN grown by molecular beam epitaxy using NH3 as a nitrogen source was studied. The incorporation efficiency of Eu increased with decreasing NH3 flow rate. The intensity of the Eu‐related emission in samples grown under lower V/III ratio was seven times larger than those of higher V/III ratio. These results may be due to the increase of Eu concentration and of nitrogen vacancy complex which will play an important role in energy transfer from GaN to Eu. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)