Nondestructive characterization of oxygen-ion-implanted silicon- on-insulator using multiple-angle ellipsometry

Silicon-on-insulator formed by high-dose and high-energy oxygen ion implantation in silicon, called SIMOX (separation by implanted oxygen), has been characterized nondestructively by multiple-angle ellipsometry using a He–Ne laser at 632.8 nm. A multilayered model exhibiting two interlayers, one between the top silicon layer and the buried oxide layer and the other between the buried oxide and the substrate silicon, offers a simple representation of SIMOX. The difference between low-temperature furnace anneal (1150 °C) and an additional high-temperature rapid thermal anneal (1150+1350 °C) on as-implanted wafers is shown by the better agreement between the theoretical model and the experimental results for the high-temperature annealed SIMOX sample.