Nondestructive characterization of high-dose oxygen implanted and 1350 °C annealed silicon-on-insulator structures has been performed by spectroscopic ellipsometry. This method provides a fully in-depth profiling (thickness and nature) of the structure including interfaces. Results have been confirmed by other techniques such as cross-sectional transmission electron microscopy and high-resolution Rutherford backscattering spectroscopy.
No takes yet. Share an insight, caveat, or question.
Ferrieu et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: