Depth profiling and interface analysis using spectroscopic ellipsometry

The use of variable energy (1.5 to 5.5 eV) and variable angle of incidence (45° to 85°) ellipsometry makes possible a nondestructive analysis of thin films and interfaces, described in multilayer models. This is demonstrated for the following selected cases: depth profiling of B and Se implanted in GaAs with the influence of thermal annealing, transition region between a crystalline Si substrate and a CVD deposited Si3N4 film. In this latter case, thermal nitridation of Si is examined in situ by attaching the ellipsometer to the CVD chamber and a rough transition between c‐Si and Si3N4 is confirmed.