The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor–dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is described. Application to the Si/thermally grown SiO2 interface shows 7.7±2.0 Å of chemically mixed a-Si and SiO2 of approximate stoichiometry SiO to be present. The amount of a-As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are found to contain about 2% unoxidized a-As.
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Aspnes et al. (1979) studied this question.