Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector

A negative differential resistance fin-shaped field-effect transistor (NDR-FinFET) using a Pb(Zr0.52Ti0.48)O3threshold selector (TS) is investigated. From the measured input transfer characteristic of NDR-FinFET, the following results are demonstrated: 1) superior reduction of off current by a factor of 350 (as compared to a baseline FinFET); 2) on current of NDR-FinFET comparable to that of the baseline FinFET; and 3) subthreshold slope of 3 mV/decade at 300 K. The operating principle of NDR-FinFET is demonstrated using MATLAB simulation. In the on-to-off and off-to-on switching processes, the existence of an unstable resistive switching region is verified through the comparison between simulation data and experimental results. The major device parameters that affect the formation of the unstable resistive switching region are revealed. Finally, it is proposed that: 1) lowering the hold voltage of the TS and 2) applying the drain voltage comparable to the threshold voltage can have the NDR-FinFET to work appropriately (i.e., not in unstable region).