The conditions for the growth of stoichiometric GdTiO3 thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 °C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO3 thin film is investigated.
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Moetakef et al. (2013) studied this question.
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