InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.
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Gu et al. (2012) studied this question.
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