Analysis of Self Heating Effect in DC/AC Mode in Multi-Channel GAA-Field Effect Transistor

In this article, the self-heating effect (SHE) of both dc and ac for a three-channel nanowire-field effect transistor (FET) is investigated and analyzed. In the dc mode, as ΔTmax(definition: Tmax-300 K) increases to 65 K, the transistor suffers from an Ion degradation of 3.8% along with a Rthof 4.875 [K/μW]. In the ac mode, as the heating time (same as the pulse time) increases, the heat is accumulated more and the cooling time increases accordingly. It is confirmed that ΔTmaxdecreases as the device operating frequency increases and ΔTmaxsaturates to about 40 K at 4 GHz. Finally, the thermal characteristics and the lifetime are analyzed while changing the duty cycle to 25%, 50%, and 75%. It shows that ΔTmaxincreases to 38, 42, and 45 K, respectively, and HCI and BTI lifetime can be increased up to two times and three times, respectively.