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We have observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs. The luminescence from a single quantum dot, exhibiting switching between two levels, has been spectrally resolved. The random telegraph noise is only observed in the presence of band filling. We find no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks, that changes. The InAs quantum dots behave similarly to InP/GaInP and InGaAs/GaAs quantum dots, with respect to random telegraph noise.
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Panev et al. (2002) studied this question.
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