We proposed and demonstrated an Al gettering process for high-quality InGaAsN quantum wells grown by metalorganic chemical vapor deposition. Ammonia flow prior to InGaAsN growth eliminates undesirable Al incorporation in the InGaAsN continuously grown on GaAs/AlGaAs layers. The InGaAsN quantum well without Al contamination showed a smooth surface and strong photoluminescence intensity. An InGaAsN vertical cavity surface-emitting laser structure grown in a single-step process using the Al gettering process showed continuous-wave operations with 2.7 mW of 1279 nm emission at room temperature.
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Takeuchi et al. (2004) studied this question.
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