Electrical Properties of Epitaxial (Pb,Sr)TiO3Thin Films Prepared by RF Magnetron Sputtering

(Pb,Sr)TiO 3 (PST) thin films were prepared by rf magnetron sputtering using a multi-element target on (111)Ir/SiO 2 /Si, (100)SrTiO 3 :La and (100)Ir/(100)SrTiO 3 substrates. Polycrystalline films were obtained on the (111)Ir/SiO 2 /Si substrate and epitaxial thin films were obtained on (100)SrTiO 3 :La and (100)Ir/(100)SrTiO 3 substrates. Their dielectric properties were measured with and without DC bias field. The electric field dependence of the dielectric constant with a value of 70% was measured under a bias of 200 kV/cm at room temperature from the epitaxial thin films.