Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications

This review summarizes progress in the fabrication of Schottky diodes (SDs), metal–semiconductor and metal–oxide–semiconductor FETs on mist-chemical vapor deposition-(CVD)-grown oxide semiconductor thin films for optical displays, high power devices, and gas sensing applications. These devices generally showed high on-currents, high rectification and on–off ratios. Mist-CVD-grown IGZO and ZTO MESFETs displayed an extreme stability against numerous standard stress conditions. Negative bias temperature stress produced a significant and permanent improvement in the performance of amorphous oxide SDs and MESFETs. Sub-kV breakdown voltage and low specific on-resistance of 0.4 mΩ cm 2 were realized in vertical Sn-doped α -Ga 2 O 3 Schottky barrier diodes by Oda et al. [Appl. Phys. Express 9 , 021101 (2016)] but severe current collapse was observed in planar Sn-doped α -Ga 2 O 3 MESFETs. Mist CVD has demonstrated its capacity for not only atomic layer-by-layer control but also the growth of active layers in high-performance electronic devices, even though it is a solution-processed atmospheric pressure technique.