Answers are grounded in this paper and cite their sources.
Extreme ultraviolet lithography semiconductor manufacturing requires a 13.5nm light source. Laser-produced plasma emission from Sn V–Sn XIV ions is one proposed industry solution. The effect of laser pulse width and spatial profile on conversion efficiency is analyzed over a range of power densities using a two-dimensional radiative magnetohydrodynamic code and compared to experiment using a 1.064μm, neodymium:yttrium aluminium garnet laser on a planar tin target. The calculated and experimental conversion efficiencies and the effects of self-absorption in the plasma edge are compared. Best agreement between theory and experiment is found for an 8.0ns Gaussian pulse.
No takes yet. Share an insight, caveat, or question.
White et al. (2008) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: